Name: Memory
Brand: SAMSUNG INDIA ELECTRONICS PRIVATE LIMITED
Availability: MadeToOrder

Lead time on request

Secure payments

Every payment is processed via Razorpay with PCI-DSS data protection and SSL encryption. We never see your card details.

PayUPIVisaMCAmexRuPayNet BankingWalletsPay Later+ more

Money-back protection

Claim a refund if your order doesn't ship, arrives damaged, or doesn't match the agreed spec. Disputes resolved within 7 working days.

Trade Assurance — coming soon for this seller

This seller has not yet activated Trade Assurance. Pay outside BharatSeal at your own risk — we recommend chatting first to verify.

Only orders placed and paid through BharatSeal can enjoy free protection by 🛡 BharatSeal Trade Assurance.

Highlights at a glance

✓Category: Device Solutions
✓Made in New Delhi, DL, India
✓Certified: ISO 9001, ISO 14001, ISO 45001

About this item

Led the global memory market since 1993.
Developed industry's first third-generation 10-nanometer-class DRAM.
Developed sixth-generation V-NAND with 100+ layer single-stack design.
Started supplying industry's highest-performing memory (16GB HBM2E).
Mass-produced highest-speed, largest-capacity mobile DRAM (16GB LPDDR5).
Mass-produced mobile memory (512GB eUFS 3.1).

Description

Creating better lives through cutting-edge green memory with the best-in-class performance. We have led the global memory market since 1993 and have developed outstanding products in anticipation of future demands, contributing to the growth of the global IT market. In 2019, we developed the industry's first third-generation 10-nanometer-class DRAM and sixth-generation V-NAND with a 100+ layer single-stack design, breaking through the previous limits of memory technologies. This year, we started supplying the industry's highest-performing memory (16GB HBM2E), which can dramatically improve the performance of supercomputers and AI analytics systems. We were also the first in the industry to mass-produce the highest-speed, largest-capacity mobile DRAM (16GB LPDDR5) optimized for ultra-high-resolution, large-screen flagship smartphones; and mobile memory (512GB eUFS 3.1) with triple the write speed of the previous 512GB eUFS 3.0 memory. In addition, we are continuously expanding the premium memory market with products such as the 30.72TB NVMe SSD, which presents a new SSD paradigm with software innovations; a second-generation 3.84TB Z-SSD for next-generation supercomputing systems; and a four-bit SSD that is transforming the three-bit SSD market with improved reliability and performance. The memory semiconductor market is expected to change rapidly with the introduction of next-generation interfaces. By developing advanced process designs and technologies ahead of time, we will continue to strengthen our leadership in the global memory market.