Scalable, high-performance solutions for RF, power, and optoelectronic devices
Built on a proven MOCVD platform with 20+ years of material science expertise
Available across Si, SiC, and Sapphire substrates
Description
AGNIT's epitaxial GaN wafers are built on a proven MOCVD platform with 20+ years of material science expertise. Available across Si, SiC, and Sapphire substrates, our wafers enable scalable, high-performance solutions for RF, power, and optoelectronic devices.
Trade & shipping terms
Set by AGNIT SEMICONDUCTORS PRIVATE LIMITED — the supplier's own terms.
Customisation
Application-specific devices tailored to your systems
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